| 摘要 |
A substrate processing apparatus comprises: a rotation table which is installed in a vacuum container to rotate, and loads a substrate; a first reaction gas supply unit which supplies first reaction gas to the surface of the rotation table; a second reaction gas supply unit which is installed to be separated in an around direction of the rotation table from the first reaction gas supply unit, and supplies a second reaction gas reacting with the first reaction gas to the surface of the rotation table; an activation gas supply unit which is installed to be separated in the around direction of the rotation table from the first reaction gas supply unit and the second reaction gas supply unit, and supplies activated etching gas to the surface of the rotation table; and a plurality of purge gas supply units which are installed in the around direction of the rotation table to approach the activation gas supply unit, and supplies purge gas to the surface of the rotation table, wherein flow rates of the purge gas supplied from the purge gas supply units are independently controlled. |
