| 摘要 |
According to an embodiment of the present invention, a semiconductor device includes: string pillars which are extended in parallel with each other; interlayer insulating patterns and conducting line patterns which enclose the string pillars by groups and are alternately stacked in an extension direction of the string pillars; stack structures which are separated by a first slit; and dummy holes which penetrate to a certain depth of the stack structures from the upper surface of the stack structure, and disposed between the string pillars. The semiconductor device can improve reliability of a three-dimensional memory device. |
