| 摘要 |
PURPOSE:To prevent the deterioration in characteristics of the titled semiconductor device due to intrusion of contaminating substance entering from a bonding pad part by a method wherein the aperture on an insulating film is made sufficiently smaller than the area of the bonding pad, and besides said aperture is positioned almost in the center of the bonding pad. CONSTITUTION:After an oxide film has been covered on the base region 2 provided by performing ion implantation through the aperture, provided on a silicon oxide film 4 which is formed on a collector substrate 1 by a high temperature oxidation, or by performing a thermal diffusion, an emitter aperture part is provided, ions are implanted, and an emitter region formed by performing a thermal diffusion is provided. The insulating film 17 to be used to cover the whole surface of the substrate whereon a base electrode wiring 15 and an emitter electrode wiring 16, has a very shallow junction part and also has a narrow slit formed in submicron order. Bonding pads 19 and 20 are provided on the insulating film 17 located on the electrode wirings 15 and 16, and they are electrically connected to the electrode wirings through an aperture 18. The aperture 18 is to be made sufficiently smaller than the area of the bonding pads 19 and 20. |
