| 发明名称 |
FORMATION OF ELECTRODE PROTECTIVE FILM |
| 摘要 |
PURPOSE:To form an SiO2 film on an electrode layer as a P<+> type polysilicon layer containing boron without lowering the contained concentration of the boron. CONSTITUTION:A gate electrode 14 or an electrode interconnection is formed of a P<+> type polysilicon layer containing boron. An oxidation treatment is executed to the electrode layer 14 by setting an oxidation temperature within a range of 850 to 750 deg.C and by a wet oxidation operation, and a protective film 16 as an SiO2 film is formed on the surface region of the electrode layer. |
| 申请公布号 |
JPH0684828(A) |
申请公布日期 |
1994.03.25 |
| 申请号 |
JP19910051945 |
申请日期 |
1991.03.18 |
| 申请人 |
OKI ELECTRIC IND CO LTD |
发明人 |
OONO MORIFUMI;HAYASHI TAKANAO |
| 分类号 |
H01L21/266;H01L21/265;H01L21/283;H01L21/3205;H01L23/52;H01L29/78;(IPC1-7):H01L21/283;H01L21/320;H01L29/784 |
主分类号 |
H01L21/266 |
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