发明名称 PHOTOLITHOGRAPHIC METHOD AND MR MAGNETIC HEAD
摘要 PROBLEM TO BE SOLVED: To obtain desired characteristics of an NiFe film without corroding even when the NiFe film is patterned by using an image reversal resist after the film is formed. SOLUTION: An MR element 3 is formed on a specified layer 2 on a substrate 1. The MR element has a three-layer structure (NiFeRh film 3a, Ta film 3a, NiFe film 3c) which is usually formed and a Ta film 3d as a protective film deposited on the three-layer structure. Then an image reversal resist is used for patterning to form lead lines 4 to be connected to the MR element. When the resist is irradiated with UV rays, acid is produced. However, the NiFe film which is easily damaged by acid is covered with the protective film so that the film is not corroded but the desired film thickness can be maintained and the characteristics do not deteriorate.
申请公布号 JPH09179307(A) 申请公布日期 1997.07.11
申请号 JP19950350804 申请日期 1995.12.26
申请人 FUJI ELELCTROCHEM CO LTD 发明人 KATSUBE YASUYUKI;AGATA MASAHIRO
分类号 G03F7/11;G03F7/26;G11B5/39;(IPC1-7):G03F7/11 主分类号 G03F7/11
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