Method of making a MOS-gated semiconductor device with a single diffusion
摘要
申请公布号
EP0889503(A3)
申请公布日期
1999.10.20
申请号
EP19980110846
申请日期
1998.06.12
申请人
HARRIS CORPORATION
发明人
NEILSON, JOHN M. S.;STENSNEY, FRANK;BHALLA, ANUP;STOKES, RICHARD DOUGLAS;SKURKEY, LOUISE E.;BRUSH, LINDA S.;BENJAMIN, JOHN L.;REXER, CHRISTOPHER L.;KOCON, CHRISTOPHER B.;SCARBA, CHRISTOPHER M.
