发明名称 |
Method for forming a fine pattern in a semiconductor device |
摘要 |
A method for forming a fine pattern in a semiconductor device removes roughness from a pattern produced in a fine pattern fabrication process using a silylation process as being one kind of a TSI process, eliminates smoothly a photosensitive film residue caused by a residue silylation layer remained on a-non-pattern area, and increases a margin of a lithography process. To achieve the foregoing, the method performs an etching process with a fluorine/oxygen mixture gas so as to remove a thin oxide film being formed on the non-pattern area after a silylation process, enables an edge portion of a silylation region to be planarized so as to prevent the pattern from becoming rough, and forms a photosensitive film pattern by developing the photosensitive film with oxygen plasma. Thereafter, the photosensitive film residue is etched again with a mixture gas of fluorine/oxygen, thereby increasing a fabrication margin of the fine pattern.
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申请公布号 |
US6156668(A) |
申请公布日期 |
2000.12.05 |
申请号 |
US19990294874 |
申请日期 |
1999.04.20 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KIM, HYUNG GI;KIM, MYUNG SOO;BOK, CHEOL KYU;BAIK, KI HO;LEE, DAE HOON;KIM, JIN WOONG;PARK, BYUNG JUN |
分类号 |
G03F7/38;(IPC1-7):H01L21/00 |
主分类号 |
G03F7/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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