| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting device having positive and negative electrodes with high adhesion. <P>SOLUTION: The nitride semiconductor light emitting device has a structure including at least an n-type nitride based semiconductor layer, a nitride based semiconductor light emitting layer, a p-type nitride based semiconductor layer, a metallic reflective layer and a plating layer which are laminated in this order. In the device, a plating adhesion layer is formed between the metallic reflective layer and the plating layer and the plating adhesion layer is made of an alloy layer containing 50 mass% or more of the same component as the main component of the metal constituting the plating layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
