| 摘要 |
The present invention relates to a literal gate using resonant tunneling diodes; and, more particularly, to a literal gate using only resonant tunneling diodes (RTDs). The present invention has an advantage in that it can provide a literal gate using resonant tunneling diodes, using fewer elements than a convention literal gate, utmost utilizing the input-output characteristics of an RTD, and reducing fabricating costs and improving a yield.
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