| 摘要 |
The present invention provides a molecular film by alkaline fluoride n-doping into an electron transport host. The present invention also provides a molecular film where the transport molecule can either be tris (8-hydroxyquinolinato) (Alq3) or fullerene. The present invention further provides a p-n junction and a field-effect transistor of the same materials. Furthermore, the present invention provides a molecular film by fullerene p-doping into a hole transport molecular host. The present invention further provides a P-I-N light-emitting device which includes a substrate and a first electrically conductive layer defining an anode electrode layer on the substrate. The device includes the p-doped molecular film as hole injection layer deposited on the anode, the n-doped electron transport film as electron injection layer, and a second electrically conductive layer defining a cathode electrode layer on the electron injection layer. The device includes a layer of light-emissive material between the p-doped layer and the n-doped layer.
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