| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the deterioration of a mobility caused by irregularity in the film thickness of a gate insulating film is revealed when the thickness of the gate insulating film becomes a 2 nm or less in terms of an SiO2 film, that a drain current is dropped, and that the deterioration of the mobility must be suppressed to about the same value as the mobility practically used at present. SOLUTION: In a fine field-effect transistor, irregularities at the interface between the gate insulating film and a gate electrode are controlled on an atomic scale. When the irregularity in the film thickness of the gate insulating film is reduced, the high-mobility field-effect transistor is manufactured. When not only a conventional SiO2 thermal oxidation film but also a high-permittivity material are used as the gate insulating film, the high mobility of the field-effect transistor can be achieved. |
