| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which improves the rate of operation and further realizes a high film-forming speed, by restraining adhesion of reaction products to other surfaces than those of a substrate. SOLUTION: The plasma CVD apparatus comprises a plasma generating region and a treatment region, which are substantially separated. The plasma generating region has a cathode electrode which is arranged in the vertical direction to a substrate arranged on the treatment region, and an anode electrode formed and arranged so as to substantially face to the cathode electrode, and opens a part in a space between the cathode electrode and the anode electrode to make the opening as a plasma supply port for supplying plasma to the treatment region. The cathode electrode has a reactive gas feed path for feeding a reactive gas to the treatment region, and has the opening of the feed path so as to be located in plasma which is introduced from the plasma generating region. The plasma-generating region generates plasma using an introduced plasma generation gas. In the treatment region, the reactive gas is supplied from the reactive gas feed path to the plasma which has been introduced from the plasma supply port, and a film consisting of generated reactants is formed on the surface of the substrate. |
