METHOD FOR REPAIRING FUSE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for repairing a fuse of a semiconductor device is provided to simplify a manufacturing process and to guarantee a layout area, by irradiating a laser beam into the exposed first metal layer so that the first poly metal layer flows to the second poly metal layer to make the first and second poly metal layers become conductive for a fuse repair. CONSTITUTION: After the first metal layer(20) is stacked on an oxide layer, the first insulating layer and the second metal layer(40) are sequentially stacked on the first metal layer. The second metal layer is etched to have a contact regarding the first metal layer and the second insulating layer(50) is stacked. The first insulating layer(30) is etched through the second insulating layer and the second metal layer to expose the first metal layer. A laser beam(80') is irradiated into the exposed second metal layer to have the second metal layer melted and flowed to a lower portion so that the second metal layer is connected to the first metal layer through the duplicate contact hole.