THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD, AS WELL AS SEMICONDUCTOR DEVICE HAVING THE THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor having reduced gate leakage failures occurring on an edge of a semiconductor film to have its gate breakdown voltage improved, and to provide its manufacturing method. SOLUTION: The thin film transistor has an island-like semiconductor film with its side end surface having a tapered form, a gate insulation film provided in contact with the surface and the side end surface of the semiconductor film, a gate electrode layer provided on the semiconductor film via the gate insulation film, an insulation film having an aperture provided on the gate electrode layer, and source electrode and drain electrode layers provided in contact with the insulation film having the aperture and connected with the semiconductor film through the aperture. Part of the gate insulation film in contact with the side end surface of the semiconductor film contains halogen and is thicker than a part in contact with the surface of the semiconductor film. COPYRIGHT: (C)2008,JPO&INPIT