| 摘要 |
PURPOSE: A semiconductor memory device and a driving method thereof are provided to ensure an optimum state of data information applied to a local input/output line by securing an operation margin of a main strobe signal and address information. CONSTITUTION: A reference strobe signal generating unit(510) generates a reference strobe signal having a reference pulse width in response to a bank information signal and a column command signal. A main strobe signal generating unit(530) generates a main strobe signal. The main strobe signal is generated by controlling the reference pulse width according to the reference strobe signal and a bank grouping signal activated in a bank grouping mode. The main strobe signal has the reference pulse width or an expanded pulse width. The main strobe signal is activated in response to the reference strobe signal. The main strobe signal is deactivated in response to a reference clock signal.
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