| 摘要 |
PURPOSE: A metal wiring of a semiconductor device and a fabrication method thereof are provided to improve reliability of the device by increasing electro migration and decreasing contact resistance. CONSTITUTION: A bottom aluminum wiring pattern is formed on a semiconductor substrate. An inter-layer insulating film covering the bottom aluminum wiring pattern is formed. A contact hole(300) revealing the surface of the bottom aluminum wiring pattern is formed by etching the inter-layer insulating film. A metal diffusion barrier(400) is deposited on the inter-layer insulating film on the semiconductor substrate including the contact hole. The metal diffusion barrier only on the bottom of the contact hole formed with the metal diffusion barrier is removed. A tantalum layer is formed on the metal diffusion barrier of the contact hole. A tungsten layer is formed on the tantalum layer.
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