Image sensors with through-oxide via structures

摘要

An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. The image sensor die may be a backside illuminated image sensor die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. Color filter housing structures may be formed over active image sensor pixels on the image sensor die. In-pixel grid structures may be integrated with the color filter housing structures to help reduce crosstalk. Light shielding structures may be formed over reference image sensor pixels on the image sensor die. The TOVs, the in-pixel grid structures, and the light shielding structures may be formed simultaneously. The formation of the color filter housing structures may also be integrated the formation of the TOVs.

主权项

1. Imaging circuitry, comprising:
a digital signal processor die; and an image sensor die mounted on the digital signal processor die, wherein the image sensor die comprises:
a through-oxide via structure that extends at least partly into the digital signal processor die;a light shielding structure, wherein the light shielding structure and the through-oxide via structure are formed in at least a common dielectric layer in the image sensor die; andcolor filter array housing structures that are formed in the same dielectric layer in which the light shielding structure is formed, wherein the through-oxide via structure has a dielectric liner, and wherein the color filter array housing structures have walls that are formed at the same time as the dielectric liner.