| 主权项 |
1. A method for manufacturing high-strength structural stacked capacitor, comprising the following steps:
forming a laminate structure on a substrate, wherein the laminate structure includes a sacrificial layer disposed above the substrate; forming a plurality of capacitor trenches in the laminate structure; forming a lower electrode layer to cover a sidewall of each of the capacitor trenches; continually forming a first dielectric layer and a first upper electrode on the laminate structure, wherein the first dielectric layer is deposited over the capacitor trenches to cover a first surface of each of the lower electrode layers, and wherein the first upper electrode layer is deposited over the capacitor trenches to cover the surface of the first dielectric layers; forming a first etch stop layer on the first upper electrode layer; selectively removing the first upper electrode layer, the first dielectric layer, the lower electrode layers, and the first etch stop layer to form a plurality of openings that expose the sacrificial layer; removing the sacrificial layer to form a plurality of etching spaces between the capacitor trenches via the openings to expose a second surface of each of the lower electrode layers; and continually forming a second dielectric layer and a second upper electrode layer on the first etch stop layer after the sacrificial layer is removed, wherein the second dielectric layer is deposited over the etching spaces to cover each second surface of the lower electrode layers, and wherein the second upper electrode layer is deposited over the etching spaces to cover the surface of the second dielectric layer. |
