| 摘要 |
The present disclosure relates to a semiconductor light emitting device. The semiconductor light emitting device includes a power transmission substrate which has a first conductive part, a second conducive part, and an insulating part interposed between the first conductive part and the second conductive part, wherein the first conductive part, the second conducive part and the insulating part form a plate shape and power is applied from the outside to the first conductive part and the second conductive part; a semiconductor light emitting chip which includes a semiconductor light emitting part which generates light by the recombination of electrons and holes, and at least one electrode formed on the semiconductor light emitting part, and is located on the power transmission substrate; and a heat radiation part which is located under the power transmission substrate and receives heat from the power transmission substrate. So, heat radiation efficiency can be improved. |
