Group III nitride semiconductor light-emitting device and production method therefor

摘要

The present invention provides a Group III nitride semiconductor light-emitting device having a low drive voltage and a production method therefor. A p-type semiconductor layer formation step comprises a p-type cladding layer formation step of forming a p-side superlattice layer on a light-emitting layer by supplying a first raw material gas containing at least a Group III element and a dopant gas, a p-type intermediate layer formation step of forming a p-type intermediate layer on the p-side superlattice layer by supplying a first raw material gas and a dopant gas, a dopant gas supply step of supplying the dopant gas while stopping the supply of the first raw material gas after the p-type intermediate layer formation step, and a p-type contact layer formation step of forming a p-type contact layer on the p-type intermediate layer by supplying a first raw material gas and a dopant gas after the dopant gas supply step.

主权项

1. A method for producing a Group III nitride semiconductor light-emitting device, the method comprising:
forming an n-type semiconductor layer; forming a light-emitting layer on the n-type semiconductor layer; and forming a p-type semiconductor layer on the light-emitting layer; wherein the forming the p-type semiconductor layer comprising: forming a p-type cladding layer on the light-emitting layer by supplying a first raw material gas containing at least a Group III element and a dopant gas; forming a p-type intermediate layer on the p-type cladding layer by supplying the first raw material gas and the dopant gas in a first period; and supplying the dopant gas in a second period while stopping the supply of the first raw material gas or reducing the supply amount of the first raw material gas so that the Group III nitride semiconductor is not grown within the second period after forming the p-type intermediate layer; and forming a p-type contact layer on the p-type intermediate layer by supplying the first raw material gas and the dopant gas in a third period after the supplying the dopant gas in the second period.