发明名称 PATTERN-DRAWING METHOD, MASK, AND MASK MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To freely form a desired exposure pattern, and to improve general versatility in a mask for decreasing the costs of the mask when forming an exposure image that is reduced as compared with a mask pattern by diffraction effect in the opening edge of the mask pattern or by adding phase shift effect to the diffraction one. SOLUTION: Masks (50, 150) are allowed to oppose a substrate at a specific interval. In the masks, exposure beam transmission regions (54, 154) having the same shape are regularly aligned two-dimensionally. A diffraction image is formed on the substrate. In the diffraction image, a zero-dimensional diffraction image in the transmission regions (54, 154) becomes smaller than the transmission regions (54, 154). The masks (50, 150) are relatively moved to the substrate for drawing by the zero-dimensional diffraction image. More specifically, the image of the opening of the mask pattern is formed at a small spot comprising the zero-dimensional diffraction image, and a desired pattern is drawn for exposure while the spot is being moved continuously or discontinuously.
申请公布号 JP2003124099(A) 申请公布日期 2003.04.25
申请号 JP20010318562 申请日期 2001.10.16
申请人 UNIV WASEDA 发明人 TOYODA EIJIRO;WASHIO MASAICHI
分类号 G03F1/22;G03F1/32;G03F1/68;G03F1/70;G03F1/76;G03F1/80;G03F7/20;H01L21/027 主分类号 G03F1/22
代理机构 代理人
主权项
地址