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发明名称
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND NITRIDE SEMICONDUCTOR DEVICE USING NITRIDE SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
KR20030032965(A)
申请公布日期
2003.04.26
申请号
KR20027016787
申请日期
2002.12.09
申请人
发明人
分类号
H01L21/205;C30B25/02;C30B25/18;H01L21/20;H01S5/02;H01S5/323
主分类号
H01L21/205
代理机构
代理人
主权项
地址
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