发明名称 Insulated support for semiconductor device and method for manufacturing the same
摘要 A plastic package type semiconductor device is composed of a rolled metal substrate (1) made of copper or copper alloy and an insulating film (2) formed on the surface of the substrate. The film may be a single-layer film made of silicon oxynitride or a composite film formed by laminating a silicon oxide layer and a silicon oxynitride layer (or a silicon nitride layer). A semiconductor element (8) is mounted on the film or on the exposed surface of the substrate. Other passive elements (3) are provided on the film. After connecting these elements with bonding wires, the entire device is sealed in a resin molding (13). This device is thus free of cracks due to difference in thermal expansion between the film and the substrate, or peeling due to moisture absorption. <IMAGE>
申请公布号 EP0521441(B1) 申请公布日期 1996.01.03
申请号 EP19920111016 申请日期 1992.06.29
申请人 SUMITOMO ELECTRIC INDUSTRIES, LIMITED 发明人 HARADA, KEIZO, C/OITAMI WKS. OF;TAKIKAWA, TAKATOSHI, C/OITAMI WKS. OF;MAEDA, TAKAO, C/OITAMI WKS. OF;BAN, SHUNSUKE, C/OITAMI WKS. OF;YAMANAKA, SHOSAKU, C/OITAMI WKS. OF
分类号 H01L23/12;H01L21/48;H01L23/14;H01L23/495;H05K1/05 主分类号 H01L23/12
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