| 摘要 |
PROBLEM TO BE SOLVED: To reduce a surface re-bonding speed of silicon by forming a non- conductive layer through the purification of a silicon wafer surface, drying, application of paint at a specific temperature or below, and drying of an applied paint. SOLUTION: The surface of a silicon wafer 1 is purified. Then, the surface of the silicon wafer 1 is dried, a paint is applied at 100 deg.C or below, and then the applied paint is dried to form a non-conductive layer. That is, since a silicon surface has silicon dioxide, the silicon surface is purified first. Then the silicon dioxide layer is etched with hydrogen fluoride. After the silicon surface has dried out, a paint is applied to the surface of silicon wafer at 100 deg.C or below, preferably at the room temperature, so that drying of the paint results in a non-conductive layer.
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