发明名称 RESIST MATERIAL AND METHOD FOR FORMING PATTERN
摘要 PROBLEM TO BE SOLVED: To obtain a resist material to which an acid generating agent is added, is particularly excellent in resolution and shows small dimensional difference between an isolated pattern and a dense pattern and small line edge roughness. SOLUTION: The resist material comprising a base resin which is a polymer structure containing no aromatic substituent, an acid generating agent and a solvent, is characterized in that the acid generating agent generates a perfluoroalkylether sulfonic acid.
申请公布号 JP2003140332(A) 申请公布日期 2003.05.14
申请号 JP20020239633 申请日期 2002.08.20
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;OSAWA YOICHI;KOBAYASHI TOMOHIRO
分类号 G03F7/004;G03F7/039;G03F7/075;H01L21/027 主分类号 G03F7/004
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