FERROELECTRIC MEMORY UTILIZING PMOS GATING CELL STRUCTURE,申请号KR20060046888-传众专利搜索

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发明名称	FERROELECTRIC MEMORY UTILIZING PMOS GATING CELL STRUCTURE
摘要
申请公布号	KR100715979(B1)	申请公布日期	2007.05.02
申请号	KR20060046888	申请日期	2006.05.25
申请人	KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION	发明人	CHUNG, YEON BAE
分类号	H01L27/105	主分类号	H01L27/105
代理机构		代理人
主权项
地址

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