| 摘要 |
The present invention relates to a fast diffusion recipe for making silicon by NO complexes, which can quicken impurities diffusion by NO complexes, thus reducing effectiveness for a given period of time and cost of production. When it is used to make CMOS well, processing period would be more rapidly. Because of the produced interface depth is affected by ventilation at stage of heat treatment, and obtaining deeper depth by N2O compared with using traditional N2, it is thus clear that this recipe features application and use value.
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