| 摘要 |
A CMOS image sensor and a method for manufacturing the same. In one example embodiment, a CMOS image sensor includes a field region and an active region, a second conductive bottom region, a first conductive well region, a second conductive top region, and a first conductive high concentration region. The field region and the active region are formed in a first conductive semiconductor substrate. The second conductive bottom region has a first depth in part of the active region. The first conductive well region is formed in the active region. The second conductive top region has a depth that is less than the first depth. The first conductive high concentration region has a depth that is less than the depth of the second conductive top region.
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