NITRIDE SEMICONDUCTOR STACKED STRUCTURE AND SEMICONDUCTOR OPTICAL DEVICE, AND METHODS FOR MANUFACTURING THE SAME

摘要

A nitride semiconductor stacked structure having good working efficiency includes a p-type nitride semiconductor layer of low resistance, which is formed from an organometallic compound, compounds including Group V elements, including ammonia and a hydrazine derivative, and a p-type impurity material on a substrate. The p-type nitride layer has a carbon concentration not higher than 1x1018 cm-3.