发明名称 Substrates and methods of forming a pattern on a substrate
摘要 Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.
申请公布号 US9358753(B2) 申请公布日期 2016.06.07
申请号 US201514788890 申请日期 2015.07.01
申请人 Micron Technology, Inc. 发明人 Sipani Vishal;Kewley David A.;Armstrong Kyle;Van Patten Michael Dean;Hyatt Michael D.
分类号 B32B3/30;G03F7/00;G03F7/20;G03F7/40;H01L21/311;H01L21/033 主分类号 B32B3/30
代理机构 Wells St. John, P.S. 代理人 Wells St. John, P.S.
主权项 1. A substrate comprising a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region, comprising: a pattern-interrupting region mask elevationally over underlying substrate material, the pattern-interrupting region mask comprising masking material, the masking material of the pattern-interrupting region mask forming a raised masking feature within the pattern-interrupting region, none of the masking material of the pattern-interrupting region mask being within the repeating pattern region; and a repeating pattern region mask elevationally over the pattern-interrupting region mask, the repeating pattern region mask comprising multiple raised masking features that are elevationally over the raised masking feature of the pattern-interrupting region mask within the pattern interrupting region and multiple raised masking features that are not elevationally over the raised masking feature of the pattern-interrupting region mask within a repeating pattern region, the repeating pattern region being different from and everywhere laterally of the pattern-interrupting region, the repeating pattern region and the pattern-interrupting region being immediately laterally adjacent one another.
地址 Boise ID US