SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

A semiconductor light-emitting device including a first type doped semiconductor layer, a second type doped semiconductor layer, a light-emitting layer, and a contact layer is provided. The light-emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The contact layer is disposed on the second type doped semiconductor layer. The second type doped semiconductor layer is disposed between the contact layer and the light-emitting layer. Dopants in the contact layer include a group IVA element and a group IIA element. The group IVA element is an electron donor. The group IIA element is an electron acceptor. The doping concentration of the group IVA element is greater than or equal to 1020 atoms/cm3, and the doping concentration of the group IIA element is greater than or equal to 1020 atoms/cm3.

主权项

1. A semiconductor light-emitting device, comprising:
a first type doped semiconductor layer; a second type doped semiconductor layer; a light-emitting layer, disposed between the first type doped semiconductor layer and the second type doped semiconductor layer; and a contact layer, disposed on the second type doped semiconductor layer, wherein the second type doped semiconductor layer is disposed between the contact layer and the light-emitting layer, wherein dopants in the contact layer comprises a group IVA element and a group IIA element, the group IVA element is an electron donor, the group IIA element is an electron acceptor, the doping concentration of the group IVA element is greater than or equal to 1020 atoms/cm3, and the doping concentration of the group IIA element is greater than or equal to 1020 atoms/cm3.