Silicon based charge neutralization systems

摘要

An embodiment of the invention provides a method for low emission charge neutralization, comprising: generating a high frequency alternating current (AC) voltage; transmitting the high frequency AC voltage to at least one non-metallic emitter; wherein the at least one non-metallic emitter comprises at least 70% silicon by weight and less than 99.99% silicon by weight; wherein the at least one emitter comprises at least one treated surface section with a destroyed oxidation layer; and generating ions from the at least one non-metallic emitter in response to the high frequency AC voltage. Another embodiment of the invention provides an apparatus for low emission charge neutralization wherein the apparatus can perform the above-described operations.

主权项

1. A method for low emission charge neutralization, comprising:
generating a high frequency alternating current (AC) voltage; transmitting the high frequency AC voltage to at least one non-metallic emitter; wherein the at least one non-metallic emitter comprises at least 70% silicon by weight and less than 99.99% silicon by weight; wherein the at least one emitter comprises at least one treated surface section with a destroyed oxidation layer; generating ions from the at least one non-metallic emitter in response to the high frequency AC voltage; wherein the at least one non-metallic emitter comprises a first ratio S/D in a range from 0.03 to 0.06; wherein S is a thickness of a sleeve that receives the at least one non-metallic emitter; and wherein D is a diameter of a shaft of the at least one non-metallic emitter.