| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device includes: a gate structure on a substrate; a raised source/drain region adjacent to the gate structure; a channel region under the gate structure; and a protection layer between the substrate and the raised source/drain region. The protection layer is interposed between the substrate and the raised source/drain region. An atom stacking arrangement of the protection layer is different from the substrate and the raised source/drain region. |
| 申请公布号 |
US2016190249(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201414583444 |
申请日期 |
2014.12.26 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
HSIEH WEN-JIA;CHEN HSIN-HUNG;LO YI-CHUN;CHEN JUNG-YOU |
| 分类号 |
H01L29/08;H01L29/78;H01L29/06;H01L29/04;H01L29/16;H01L21/02;H01L27/092;H01L29/66 |
主分类号 |
H01L29/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a gate structure on a substrate; a raised source/drain region adjacent to the gate structure; a channel region under the gate structure; and a protection layer, wherein:
the protection layer is interposed between the substrate and the raised source/drain region, andan atom stacking arrangement of the protection layer is different from the substrate and the raised source/drain region. |
| 地址 |
HSINCHU TW |
