| 摘要 |
An etching method of the present invention etches a first area composed of silicon oxide by restraining a second area composed of silicon nitride from being cut. According to an embodiment of the present invention, the etching method comprises: executing a first sequence one or more times; and executing a second sequence one or more times. Each of the first sequence with one or more times, and each of the second sequence with one or more times include: a first process for forming a deposit including fluorocarbon on a material to be processed; and a second process for etching a first area by radical of the fluorocarbon included in the deposit. The quantity of the first area etched by the first sequence with one or more times is less than the quantity of the first area etched by the second sequence with one or more times. |
