DISHING REDUCING IN TUNGSTEN CHEMICAL MECHANICAL POLISHING

摘要

The present invention relates to: slurry which can be used to chemical and mechanical polishing (CMP) of a semiconductor device containing tungsten; a method; and a system. The slurry comprises: an abrasive; at least one oxidizing agent; an activation agent; an additive; a pH adjusting agent; and the remaining consisting of water. The additive is used to reduce dishing on big feature sizes and small feature sizes (not only a large bonding pad but a fine line structure) without retarding a tungsten removal rate.