| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for simply calculating the warp quantity accompanied by the temperature change of a two- or three-layered material and to make the planning or selection of the material of a semiconductor device or the like having an adhesive layer efficient. <P>SOLUTION: In the method for planning the material of the laminated structure such as the semiconductor device or the like, a chip 2 is mounted on a substrate 1, the warp deformation quantity (d) of the laminated structure is calculated according to the numerical formula (1): d=3ΔT.A.L<SP>2</SP>/[B+6C+4D+12 E<SB>b</SB>t<SB>b</SB>t<SB>p</SB>E<SB>c</SB>t<SB>c</SB>(t<SB>b</SB>+t<SB>p</SB>+t<SB>c</SB>)], provided that A=[E<SB>b</SB>t<SB>b</SB>E<SB>p</SB>t<SB>p</SB>(t<SB>b</SB>+t<SB>p</SB>) (α<SB>b</SB>-α<SB>p</SB>)+E<SB>p</SB>t<SB>p</SB>E<SB>c</SB>t<SB>c</SB>(t<SB>p</SB>+ t<SB>c</SB>)(α<SB>p</SB>-α<SB>c</SB>) +E<SB>c</SB>t<SB>c</SB>E<SB>b</SB>t<SB>b</SB>(t<SB>b</SB>+2t<SB>p</SB>+t<SB>c</SB>) (α<SB>b</SB>-α<SB>c</SB>), B=E<SB>b</SB><SP>2</SP>t<SB>b</SB><SP>4</SP>+E<SB>p</SB><SP>2</SP>t<SB>p</SB><SP>4</SP>+E<SB>c</SB><SP>2</SP>t<SB>c</SB><SP>4</SP>, C=E<SB>b</SB>t<SB>b</SB><SP>2</SP>E<SB>p</SB>t<SB>p</SB><SP>2</SP>+ E<SB>p</SB>t<SB>p</SB><SP>2</SP>E<SB>c</SB>t<SB>c</SB><SP>2</SP>+E<SB>c</SB>t<SB>c</SB><SP>2</SP>E<SB>b</SB>t<SB>b</SB><SP>2</SP>and D=E<SB>b</SB>t<SB>b</SB>E<SB>p</SB>t<SB>p</SB>(t<SB>b</SB><SP>2</SP>+t<SB>p</SB><SP>2</SP>)+E<SB>p</SB>t<SB>p</SB>E<SB>c</SB>t<SB>c</SB>(t<SB>p</SB><SP>2</SP>+t<SB>c</SB><SP>2</SP>)+E<SB>c</SB>t<SB>c</SB>E<SB>b</SB>t<SB>b</SB>(t<SB>c</SB><SP>2</SP>+t<SB>b</SB><SP>2</SP>) (wherein,ΔT is a temperature change, 2L is the length of the structure. E is Young's modulus with respect to each of materials of respective layers c, p and b,αis the coefficient of linear expansion and t is thickness). The calculated value is used to plan the material. <P>COPYRIGHT: (C)2003,JPO</p> |
