| 摘要 |
PURPOSE:To implement a highly integrated memory device and make it possible to read it at high speed, by forming a p-n junction by laminating a P-type semiconductor layer and an N-type semiconductor layer at a point of intersection between a bit line and a word line made of metal and forming a contact in accordance with information to be stored. CONSTITUTION:A plurality of second band metal layers 4 are provided in parallel with each other on an upper part of a plurality of first band metal layers provided on a surface of a substrate 1 in parallel with each other through an insulating film 3 and in a direction so as to cross the first band metal layers 2 at right angles. A p-n junction is formed by laminating a P-type semiconductor layer 5 and an N-type semiconductor layer 6 between the first band metal layer 2 and the insulating film 3 at a point of intersection between the first band metal layer 2 and the second band metal layer 4. Then, a contact hole 7 is formed in the insulating film 3 of the point of intersection between the first band metal layer 2 and the second band metal layer 4 in accordance with information to be stored. For example, a high melting point metal, silicide or the like is used as the first band metal layer 2 and an aluminum or the like is used as the second band metal layer 4 and a PSG film or the like is used as an interlayer insulating film 3. |
