| 摘要 |
PURPOSE:To obtain an element capable of forming the Schottky barrier with a good quality on a monocrystalline film of silicon carbide doped with an impurity, by forming a non-doped monocrystalline thin film of silicon carbide between the Schottky electrode and the monocrystalline film of silicon carbide doped with an impurity. CONSTITUTION:In a semiconductor element in which the Schottky electrode 4 is provided by forming the Schottky barrier on a monocrystalline film 2 of silicon carbide doped with an impurity, which is formed on an Si monocrystalline substrate 1, a non-doped silicon carbide monocrystalline thin film 3 is formed between the Schottky electrode 4 and the monocrystalline film 2 of silicon carbide doped with an impurity. For example, the monocrystalline film 2 of silicon carbide doped with nitrogen having a film thickness of 3mum is formed by a CVD method on the Si monocrystalline substrate 1 using SiH4, C3H8 and N2 and the non-doped silicon carbide monocrystalline film 3 having a film thickness of 0.2mum is formed thereon by the same method. Thereafter, the Schottky electrode 4 and an ohmic electrode 5 are formed on upper and lower part thereof respectively to form the Schottky diode. |
