HIGH VOLTAGE DISCHARGE CIRCUIT FOR NON-VOLATILE MEMORY

摘要

The circuit comprises a voltage-dropping means between a wire which has large parasitic capacitance due to the applied voltage higher than a power source voltage and a MOS transistor for high voltage discharge. The voltage-dropping means is a MOS transistor which has a gate supplied with a power source voltage, a drain connected to the above wire and a source connected to a drain of the MOS transistor for a high voltage discharge.