Method for forming metal wire of semiconductor device

摘要

A method for forming a metal wire of a semiconductor device is disclosed. The method for forming a metal wire of a semiconductor device can reduce a junction leakage current and improve the reliability of a semiconductor device by forming a silicon thin film on a silicon substrate with a contact hole before depositing a titanium film or a titanium nitride film in order to improve contact resistance caused by the increase of a dopant concentration by maximally suppressing the formation of a titanium silicide film on a junction area in the silicon substrate in the heat treatment process.