The memory cell field includes numerous read-out buffers each one corresponding coupled to a pair of read-write lines with a similar layout for several write buffers. For each read-out and write buffer is provided a first read-out and write line respectively. To the first read-out lines is coupled a read-out register, and a write register is coupled to the first write lines. Between the read-out register and a static memory cell field is incorporated a second write line for transmission of a data value from the register. A second read-out line is incorporated between the static memory cell field and the write register for transmission of a data value.
