发明名称 PLASMA TREATING DEVICE
摘要 <p>The invention is intended to produce a plasma of uniform density in a wide region and to achieve plasma processing of a surface of a wafer (W) highly uniformly. A transmission window (23) which transmits a microwave is held on an upper wall of a vacuum vessel (2) having a plasma chamber (21) and a film forming chamber (22), and a waveguide (4) for guiding the microwave of 2.45 GHz for propagation into the vacuum vessel (2) in a TM mode is joined to the outer surface of the transmission window (23). The waveguide (4) has a rectangular waveguide section (41) a cylindrical waveguide section (42) serving as a TM converter, and a conical waveguide section (43) having an exit end connected to the outer surface of the transmission window (23). The microwave is propagated in a TM mode into the vacuum vessel (2) and a magnetic field is created in the vacuum vessel (2). A plasma can be formed in uniform density in the plasma chamber (21) if the inside diameter (A) of the exit end of the conical waveguide section is in the range of 130 to 160 mm, so that the highly uniform plasma processing of the surface of a wafer (W) of, for example, 8 in. in diameter can be achieved.</p>
申请公布号 EP1094505(A1) 申请公布日期 2001.04.25
申请号 EP19970913415 申请日期 1997.11.20
申请人 TOKYO ELECTRON LIMITED 发明人 ISHIZUKA, SHUICHI;NAKASE, RISA;AOKI, TAKESHI
分类号 H01L21/31;H01J37/32;(IPC1-7):H01L21/31;H05H1/46;C23F4/00;H01L21/205;H01L21/306;C23C16/50 主分类号 H01L21/31
代理机构 代理人
主权项
地址