发明名称 |
EMBEDDED CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device with an embedded capacitor structure. A dielectric layer is disposed on a substrate, having a contact opening exposing the substrate and a trench opening above the contact opening. A first metal electrode layer is conformally disposed over the sidewalls and bottoms of the contact and trench openings. A second metal electrode layer is conformally disposed over the sidewalls and bottoms of the contact and trench openings. A capacitor dielectric layer is interposed between the first and second metal electrode layers. A method for fabricating the semiconductor device is also disclosed.
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申请公布号 |
US2007287247(A1) |
申请公布日期 |
2007.12.13 |
申请号 |
US20060422701 |
申请日期 |
2006.06.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIU MING-CHYI;LO CHI-HSIN |
分类号 |
H01L21/8244 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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