| 摘要 |
A method for finishing a metal line for a semiconductor device is disclosed, in which polymer generated when forming the metal line including aluminum and its alloy is effectively removed and the metal line is prevented from being eroded. A chlorine radical and a chlorine compound remaining on a surface of the metal line are removed using H<SUB>2</SUB>O plasma and the polymer is removed using H<SUB>2</SUB>O gas and HF gas not plasma. Therefore, it is possible to improve reliability and yield of the semiconductor device.
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