发明名称 SYNTHETIC QUARTZ GLASS MATERIAL FOR ArF PHOTOLITHOGRAPHY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a synthetic quartz glass material, which composes an optical system that transmits an ArF excimer laser beam having an energy density per pulse in the range of 0.001-0.5 mJ/cm<SP>2</SP>and especially composes an optical system comprising a lens, a prism, a window, etc., suitably usable for the photolithography device for a semiconductor wafer, and of which the double refraction quantity slightly changes when irradiated with a laser beam. <P>SOLUTION: The synthetic quartz glass material is used for an optical system in an ArF photolithography device which transmits the ArF excimer laser beam having an energy density per pulse in the range of 0.001-0.5 mJ/cm<SP>2</SP>. In the material, the homogeneityΔn of its refractive index is≤1×10<SP>-6</SP>, the quantity of its double refraction is≤1 nm/cm, its internal transmittance of an ultraviolet beam having a wavelength of 193.4 nm is≥99.7%. Besides, its OH group concentration is made≥5 ppm and≤300 ppm, and its hydrogen molecule concentration is made≥1×10<SP>16</SP>molecules/cm<SP>3</SP>and <2×10<SP>17</SP>molecules/cm<SP>3</SP>. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003221245(A) 申请公布日期 2003.08.05
申请号 JP20020024256 申请日期 2002.01.31
申请人 SHINETSU QUARTZ PROD CO LTD;HERAEUS QUARZGLAS GMBH & CO KG 发明人 FUJINOKI AKIRA;NISHIMURA HIROYUKI;UEBBING BRUNO
分类号 G02B1/00;C03B8/04;C03B19/14;C03B20/00;C03C3/06;C03C4/00;G02B3/00;(IPC1-7):C03B20/00 主分类号 G02B1/00
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