| 摘要 |
PROBLEM TO BE SOLVED: To completely read out a signal charge stored in the photoelectric conversion part of a solid-state image pickup device with a low voltage-drive readout transistor and to aim at enhancement of the sensitivity of the device and noise reduction in the device. SOLUTION: In a solid-state image pickup device of a structure, wherein the device is provided with an n-type photodiode(PD) 21, which is provided in the interior of a p-type well 20 and stores a signal charge obtained by making photoelectric conversion, a gate electrode 22 which is adjacent to one end of this PD 21 and is provided over the well, an n-type drain region 23 provided in the surface part which is located on the side opposite to this gate electrode 22 and the PD 21 of the well and a p+ surface shielding layer 25 provided over the PD 21, an n-type embedded gate layer 24 is provided, in contact with the PD 21 on the upper part which is positioned on the side of the electrode 22 of the PD 21 and in such a way that a part of the layer 24 overlaps the electrode 22.
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