Random access memory cell and method for fabricating same

摘要

A random access memory cell and fabrication method therefor are disclosed. The random access memory cell includes a first and a second pull-down transistor crosscoupled such that a control terminal of the first pull-down transistor is connected to a conduction terminal of the second pull-down transistors, and the control terminal of the second pull-down transistor is connected to the conduction terminal of the first pull-down transistor. A first pass gate transistor is coupled between the conduction terminal of the first transistor and a first bit line of a bit line pair, and a second pass gate transistor is coupled between the conduction terminal of the second transistor and a second bit line of the bit line pair. The threshold voltage of the first and second pass gate transistors is such that a subthreshold current is provided to the first and second pull-down transistors when the memory cell is not being accessed such that the conduction terminal of the pull-down transistor that is turned off is maintained at a voltage level corresponding to a logic high voltage. In this way, the memory cell is capable of performing a latching function without pull-up transistors. <IMAGE>