IMPROVED GAPFILL OF SEMICONDUCTOR STRUCTURE USING DOPED SILICATE GLASSES WITH MULTI-STEP DEPOSITION/ANNEAL PROCESS,申请号EP19980954322-传众专利搜索

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发明名称	IMPROVED GAPFILL OF SEMICONDUCTOR STRUCTURE USING DOPED SILICATE GLASSES WITH MULTI-STEP DEPOSITION/ANNEAL PROCESS
摘要
申请公布号	EP1025583(B1)	申请公布日期	2006.06.14
申请号	EP19980954322	申请日期	1998.09.30
申请人	INFINEON TECHNOLOGIES AG	发明人	KIRCHHOFF, MARKUS;ILG, MATTHIAS
分类号	H01L21/768;H01L21/3105	主分类号	H01L21/768
代理机构		代理人
主权项
地址

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