发明名称 |
Method for Reducing Word Line Current in Magnetoresistive Random Access Memory and Structure Thereof |
摘要 |
The method for reducing word line currents in magnetoresistive random access memory (MRAM) includes disposing the MRAM bit between a pair of word lines according to a magnetic field strength is increased when a distance between a magnetic section and its corresponding word line is decreased.
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申请公布号 |
US2007086233(A1) |
申请公布日期 |
2007.04.19 |
申请号 |
US20060539296 |
申请日期 |
2006.10.06 |
申请人 |
NORTHERN LIGHTS SEMICONDUCTOR CORP. |
发明人 |
LAI JAMES C.;AGAN TOM A. |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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