发明名称 Systems and methods for reducing copper contamination due to substrate processing chambers with components made of alloys including copper
摘要 Systems and methods for reducing copper contamination in a substrate processing system include performing a plasma process on a substrate in a processing chamber of a substrate processing system. A component is located in the processing chamber and is made of an alloy including copper. The plasma process uses a process gas mixture including molecular hydrogen. Prior to performing the plasma process on the substrate and before the substrate is arranged in the processing chamber, the component is conditioned in the processing chamber using a conditioning plasma process that includes a process gas mixture including molecular oxygen and forming gas.
申请公布号 US9397011(B1) 申请公布日期 2016.07.19
申请号 US201514684870 申请日期 2015.04.13
申请人 Lam Research Corporation 发明人 Fang Haoquan;Ting Yuk-Hong;Cheung David
分类号 H01L21/66;H01J37/32;C23C16/50;C23C16/455;H01L21/285;H01L21/3213;H01L21/027;H01L21/3105;H01L21/311;H01L21/3065;H01L21/02;H01L21/67 主分类号 H01L21/66
代理机构 代理人
主权项 1. A method for reducing copper contamination in a substrate processing system, comprising: performing a plasma process on a substrate in a processing chamber of a substrate processing system, wherein a component located in the processing chamber is made of an alloy including copper, wherein the plasma process uses a process gas mixture including molecular hydrogen; and prior to performing the plasma process on the substrate and before the substrate is arranged in the processing chamber, conditioning the component in the processing chamber using a conditioning plasma process that includes a process gas mixture including molecular oxygen and forming gas.
地址 Fremont CA US